bcp56 npn general purpose amplifier these devices are designed for general purpose medium power amplifiers and switches requiring collector currents to 1a. sourced from pr ocess 3 9. absolute maximum ratings* t a = 25c unless otherwise noted c -55 to +150 operating and storage junction temperature range t j, t stg a 1.2 collector current - continuous i c v 5 emitter-base voltage v ebo v 100 collector-base voltage v cbo v 80 collector-emitter voltage v ceo units bcp56 parameter symbol *these ratings are limiting values above which the serviceability of any semiconductor device may be impaired. notes: 1) these ratings are based on a maximum junction temperature of 150c. 2) these are steady state limits. the factory should be consulted on applications involving pulsed or low duty cycle ope rations. thermal characteristics t a = 25c unless otherwise noted c/w 125 thermal resistance, junction to ambient r q ja w mw/c 1 8 total device dissipation derate above 25c p d bcp56 units max characteristic symbol *device mounted on fr-4 pcb 36 mm x 18 mm x 1.5 mm; mounting pad for the collector lead min. 6 cm 2 . bcp56 ? 199 8 fairchild semiconductor corporation sot-223 c e c b pr3947_rev a
v 1 i c = 500 m a, v ce = 2 v base-emitter on voltage v be(on) v 0.5 i c = 500 m a, i b = 50 ma collector-emitter saturation voltage v ce(sat) - 250 25 40 25 i c = 5 ma, v ce = 2v i c = 150 ma, v ce = 2v i c = 500ma, v ce = 2 v dc current gain h fe on characteristics * m a 10 v eb = 5v emitter cutoff current i ebo na u a 100 10 v cb = 30 v v cb = 30 v, t j = +125c collector cutoff current i cbo v 5 i e = 10 m a emitter-base breakdown voltage bv ebo v 100 i c = 100 m a collector-base breakdown voltage bv cbo v 80 i c = 10 ma collector-emitter breakdown voltage bv ceo off characteristics units max min test conditions parameter symbol npn general purpose amplifier (continued) electrical characteristics t a = 25c unless otherwise noted *pulse test: pulse width 300 m s, duty cycle 2.0% bcp56 pr3947_rev a
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